SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING APPARATUS

• Main Authors: DOBA SHIGEKI, MIYOSHI SHUSUKE, NAITO HIROSHI
• Format: Patent
• Language: English; Japanese
• Published: 19.04.2022
• Subjects: BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OFNEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMICBEAMS; SEMICONDUCTOR DEVICES; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

To appropriately reduce metal contamination on the back surface of a substrate during plasma processing.SOLUTION: In a method of processing a substrate by a substrate processing apparatus, the substrate processing apparatus includes a processing container that processes a substrate inside, a plasma generation space formed inside the processing container, a processing space that communicates with the plasma generation space via a partition plate, a mounting table provided inside the processing space and mounting the substrate on the upper surface thereof, and an elevating mechanism that raises and lowers the substrate on the mounting table, and during plasma processing of the substrate in the processing space, the substrate is raised and lowered using the elevating mechanism to cause a potential change in the substrate during the plasma processing.SELECTED DRAWING: Figure 3 【課題】プラズマ処理における基板裏面の金属汚染を適切に低減する。【解決手段】基板処理装置により基板を処理する方法であって、基板処理装置は、内部で基板を処理する処理容器と、前記処理容器の内部に形成されるプラズマ生成空間と、前記プラズマ生成空間と仕切板を介して連通する処理空間と、前記処理空間の内部に設けられ、基板を上面に載置する載置台と、前記載置台上で基板を昇降させる昇降機構と、を有し、前記処理空間における基板のプラズマ処理中に、前記昇降機構を用いて基板を昇降させ、該プラズマ処理中の基板に電位変化を生じさせる。【選択図】図３