SEMICONDUCTOR DEVICE

• Main Authors: TAKAHASHI TETSUO, KUDO KAZUKI, FUJII HIDENORI
• Format: Patent
• Language: English; Japanese
• Published: 11.04.2022
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

To obtain a semiconductor device with reduced recovery loss in the diode region of RC-IGBTs.SOLUTION: A semiconductor device according to the present disclosure is a RC-IGBT in which an IGBT region 10 and a diode region 20 are provided adjacent to each other. A diode region 20 has a p-type anode layer 25 provided on the first major surface side than the n- type drift layer 1, a p-type contact layer 24 provided on the first major surface side of the p-type anode layer 25 and on the surface layer on the first major surface side of the semiconductor substrate and connected to the emitter electrode 6, and a n+-type cathode layer 26 provided on the surface layer on the second main surface side of the semiconductor substrate. The p-type contact layer 24 contains aluminum as a p-type impurity, and the thickness of the p-type contact layer 24 is smaller than the thickness of the n+ type source layer 13 provided in the IGBT region 10.SELECTED DRAWING: Figure 9 【課題】ＲＣ－ＩＧＢＴのダイオード領域のリカバリ損失を低減した半導体装置を得る。【解決手段】本開示に係る半導体装置は、ＩＧＢＴ領域１０とダイオード領域２０とが隣接して設けられたＲＣ－ＩＧＢＴである。ダイオード領域２０には、ｎ－型ドリフト層１よりも第１主面側に設けられたｐ型アノード層２５と、ｐ型アノード層２５の第１主面側であって半導体基板の第１主面側の表層に設けられ、エミッタ電極６に接続されたｐ型コンタクト層２４と、半導体基板の第２主面側の表層に設けられたｎ＋型カソード層２６と、が設けられている。ｐ型コンタクト層２４は、ｐ型不純物としてアルミを含有し、ｐ型コンタクト層２４の厚さは、ＩＧＢＴ領域１０に設けられたｎ＋型ソース層１３の厚さよりも小さい。【選択図】図９