SEMICONDUCTOR DEVICE

• Main Authors: MIZUKAMI MAKOTO, KAMATA SHUJI, IRIFUNE HIROYUKI, KONO HIROSHI
• Format: Patent
• Language: English; Japanese
• Published: 31.03.2022
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

To provide a semiconductor device that can improve reliability.SOLUTION: The semiconductor comprises a first electrode, a second electrode, a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type, a third semiconductor layer of the first conductivity type, a first active region of the first conductivity type, and a third electrode. The first semiconductor layer is provided between the first electrode and the second electrode, and the second semiconductor layer is provided on the first semiconductor layer. The first active region is adjacent to the second semiconductor layer in a second direction, and the first active region has a first upper part and a second lower part. An average value of width in the second direction of the first lower part is larger than an average value of width in the second direction of the first upper part. The third semiconductor layer is electrically connected to the second electrode. The third electrode is provided with an insulative film disposed between itself and the first active region.SELECTED DRAWING: Figure 3 【課題】信頼性を向上できる半導体装置を提供する。【解決手段】半導体装置は、第１電極と、第２電極と、第１導電形の第１半導体層と、第２導電形の第２半導体層と、第１導電形の第３半導体層と、第１導電形の第１活動領域と、第３電極と、を有する。前記第１半導体層は、前記第１電極と前記第２電極の間に設けられている。前記第２半導体層は、前記第１半導体層の上に設けられている。前記第１活動領域は、第２方向において前記第２半導体層と隣接する。前記第１活動領域は、前記第１上部と第２下部を有する。前記第１下部の前記第２方向における幅の平均値は、前記第１上部の前記第２方向における幅の平均値よりも大きい。前記第３半導体層は、前記第２電極と電気的に接続されている。前記第３電極は、前記第１活動領域との間に絶縁膜を介して設けられている。【選択図】図３