SEMICONDUCTOR STORAGE DEVICE

• Main Author: OIDE HIROYUKI
• Format: Patent
• Language: English; Japanese
• Published: 30.03.2022
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

To provide a semiconductor storage device that can be manufactured suitably.SOLUTION: A semiconductor storage device includes a first region, a second region, and a third region. The first region includes a plurality of first wires extending in a first direction and arranged in a second direction, a plurality of second wires extending in the second direction and intersecting with the first wires, and a plurality of memory cells provided at intersections between the first wires and the second wires. The second region includes a contact extending in a third direction. The third region includes a plurality of first dummy wires extending in the first direction and arranged in the second direction, and a plurality of second dummy wires extending in the second direction, arranged in the first direction, and intersecting with the first dummy wires. The width in the first direction of one of the second dummy wires that is the closest to the first region or the second region in the first direction is less than or equal to the width in the first direction of the second dummy wire that is the second closest to the first region or the second region in the first direction.SELECTED DRAWING: Figure 6 【課題】好適に製造可能な半導体記憶装置を提供する。【解決手段】半導体記憶装置は、第１領域、第２領域及び第３領域を備える。第１領域は、第１方向に延びて第２方向に並ぶ複数の第１配線と、第２方向に延びて第１方向に並び複数の第１配線とそれぞれ交差する複数の第２配線と、複数の第１配線及び複数の第２配線の交差部分に設けられた複数のメモリセルと、を備える。第２領域は、第３方向に延びるコンタクトを備える。第３領域は、第１方向に延びて第２方向に並ぶ複数の第１ダミー配線と、第２方向に延びて第１方向に並び複数の第１ダミー配線とそれぞれ交差する複数の第２ダミー配線と、を備える。複数の第２ダミー配線のうち、第１方向において第１領域又は第２領域に最も近い第２ダミー配線の第１方向の幅が、第１方向において第１領域又は第２領域に２番目に近い第２ダミー配線の第１方向の幅以下である。【選択図】図６