SPUTTERING TARGET, MANUFACTURING METHOD THEREFOR, AND METHOD FOR MANUFACTURING MAGNETIC RECORDING MEDIUM

• Main Author: IWABUCHI YASUYUKI
• Format: Patent
• Language: English; Japanese
• Published: 15.03.2022
• Subjects: ARTIFICIAL STONE; CEMENTS; CERAMICS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDINGMATERIALS; CONCRETE; DIFFUSION TREATMENT OF METALLIC MATERIAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; LIME, MAGNESIA; METALLURGY; REFRACTORIES; SLAG; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; TREATMENT OF NATURAL STONE

To provide a sputtering target that has a lowered specific resistance and contains silicon nitride (Si3 N4), a manufacturing method therefor, and a method for manufacturing a magnetic recording medium.SOLUTION: Provided is a sputtering target containing Si3 N4, SiC, MgO, and TiCN, and having a specific resistance of 10 mΩ cm or less.SELECTED DRAWING: None 【課題】比抵抗を低下させた、窒化珪素（Ｓｉ3Ｎ4）を含有するスパッタリングターゲット、その製造方法、及び磁気記録媒体の製造方法の提供。【解決手段】Ｓｉ3Ｎ4、ＳｉＣ、ＭｇＯ、及びＴｉＣＮを含有し、比抵抗が１０ｍΩ・ｃｍ以下であるスパッタリングターゲット。【選択図】なし