METHOD AND DEVICE FOR CONTROLLING FILM THICKNESS OF PROTECTION FILM ON SUBSTRATE

• Main Author: KATSUNUMA TAKAYUKI
• Format: Patent
• Language: English; Japanese
• Published: 10.03.2022
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

To provide a method and device for protecting, by a protection film, a side wall of a concave portion as a part of an etching process to form a concave portion of a high aspect ratio.SOLUTION: The method comprises: an exposure step of exposing a substrate to a precursor to arrange particles of the precursor at least on a side wall of a concave portion of an etching layer in a reaction chamber; a supply step of supplying an inhibition gas and a quality-modification gas into the reaction chamber to generate plasma; and a modification step of modifying, in quality, the precursor particles on the side wall into a protection film while supplying the inhibition gas and quality-modification gas into the reaction chamber.SELECTED DRAWING: Figure 5 【課題】高アスペクト比の凹部を形成するためのエッチング処理の一部として、凹部の側壁を保護膜で保護する方法及び装置を提供する。【解決手段】方法は、反応チャンバ内で、基板を前駆体に曝して、エッチング層の凹部の少なくとも側壁上に前駆体粒子を配置する曝露工程と、反応チャンバに阻害ガスと改質ガスを供給してプラズマを発生させる供給工程と、反応チャンバに阻害ガスと改質ガスを供給しながら、側壁上の前駆体粒子を保護膜に改質する改質工程と、を含む。【選択図】図５