SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING DEVICE

To provide a substrate processing method for inhibiting cracks and chips of a lamination substrate manufactured by joining substrates.SOLUTION: In a method, a lamination substrate Ws manufactured by joining a first substrate W1 to a second substrate W2 is rotated; a filler F having a thermosetting p...

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Bibliographic Details
Main Authors NAKANISHI MASAYUKI, SATAKE MASAYUKI, YAMASHITA MICHIYOSHI
Format Patent
LanguageEnglish
Japanese
Published 10.03.2022
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:To provide a substrate processing method for inhibiting cracks and chips of a lamination substrate manufactured by joining substrates.SOLUTION: In a method, a lamination substrate Ws manufactured by joining a first substrate W1 to a second substrate W2 is rotated; a filler F having a thermosetting property is applied to a gap between a peripheral edge part of the first substrate W1 and a peripheral edge part of the second substrate W2; and the filler F is cured. A process, in which the filler F is applied, and a process, in which the filler is cured, are continuously conducted in the same processing chamber 21.SELECTED DRAWING: Figure 4 【課題】複数の基板を接合して製造される積層基板の割れおよび欠けを抑制するための基板処理方法を提供する。【解決手段】本方法は、第１基板Ｗ１と第２基板Ｗ２を接合して製造される積層基板Ｗｓを回転させ、第１基板Ｗ１の周縁部と、第２基板Ｗ２の周縁部との間の隙間に熱硬化性を有する充填剤Ｆを塗布し、この充填剤Ｆを硬化させる。充填剤Ｆを塗布する工程と、充填剤Ｆを硬化させる工程は、同一の処理室２１内で連続して行われる。【選択図】図４
Bibliography:Application Number: JP20200143517