MANUFACTURING METHOD OF SILICON SINGLE CRYSTAL SUBSTRATE AND SILICON SINGLE CRYSTAL SUBSTRATE

• Main Authors: SUNAKAWA TAKESHI, MAGARI TAKEMINE, IGAWA SHIZUO
• Format: Patent
• Language: English; Japanese
• Published: 10.03.2022
• Subjects: AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR; BASIC ELECTRIC ELEMENTS; CHEMISTRY; CRYSTAL GROWTH; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; METALLURGY; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; REFINING BY ZONE-MELTING OF MATERIAL; SEMICONDUCTOR DEVICES; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; SINGLE-CRYSTAL-GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL

To provide a silicon single crystal substrate having close gettering ability, high strength near the surface, and resistant to dislocation generation and dislocation extension, and a manufacturing method thereof.SOLUTION: A manufacturing method of a silicon single crystal substrate having a carbon diffusion layer on the surface includes the steps of adhering carbon to the surface of a silicon single crystal substrate by RTA-treating the silicon single crystal substrate in a carbon-containing gas atmosphere, reacting the carbon with the silicon single crystal substrate to form a 3C-SiC single crystal film on the surface of the silicon single crystal substrate, oxidizing the 3C-SiC single crystal film to form an oxide film by RTA-treating the silicon single crystal substrate on which the 3C-SiC single crystal film has been formed in an oxidizing atmosphere and inwardly diffusing carbon into the silicon single crystal substrate, and removing the oxide film.SELECTED DRAWING: Figure 1 【課題】近接ゲッタリング能力を有し、かつ表面近傍の強度が高く、転位の発生や転位が伸展しにくいシリコン単結晶基板及びその製造方法を提供することを目的とする。【解決手段】表面に炭素拡散層を有するシリコン単結晶基板の製造方法であって、シリコン単結晶基板を炭素含有ガス雰囲気でＲＴＡ処理することにより、前記シリコン単結晶基板の表面に炭素を付着させる工程と、前記炭素と前記シリコン単結晶基板とを反応させて、前記シリコン単結晶基板の表面に３Ｃ－ＳｉＣ単結晶膜を形成する工程と、前記３Ｃ－ＳｉＣ単結晶膜が形成されたシリコン単結晶基板を酸化性雰囲気中でＲＴＡ処理することにより、前記３Ｃ－ＳｉＣ単結晶膜を酸化して酸化膜とするとともに前記シリコン単結晶基板中に炭素を内方拡散させる工程と、前記酸化膜を除去する工程とを含むシリコン単結晶基板の製造方法。【選択図】図１