SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, AND METHOD FOR REUSING SUBSTRATE

• Main Authors: MATSUO MIE, HAYASHI HIDEKAZU
• Format: Patent
• Language: English; Japanese
• Published: 04.03.2022
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

To provide a method for manufacturing a semiconductor device capable of suitably separating substrates stuck to each other.SOLUTION: According to an embodiment, a method for manufacturing a semiconductor device includes: forming a first semiconductor layer including an impurity atom of a first concentration on a first substrate; forming a second semiconductor layer including an impurity atom having a second concentration higher than the first concentration on the first semiconductor layer; and forming a porous layer in which at least a part of the second semiconductor layer is made porous. The method further includes: forming a first film including a first device on the porous layer; preparing a second substrate in which a second film including a second device is provided; and sticking the first substrate and the second substrate so as to sandwich the first film and the second film. In addition, the method includes: separating the first substrate and the second substrate so that a first portion of the porous layer remains on the first substrate and a second portion of the porous layer remains on the second substrate.SELECTED DRAWING: Figure 3 【課題】貼り合わされた基板同士を好適に分離することが可能な半導体装置の製造方法を提供する。【解決手段】一の実施形態によれば、半導体装置の製造方法は、第１基板上に、第１濃度の不純物原子を含む第１半導体層を形成し、前記第１半導体層上に、前記第１濃度より高い第２濃度の不純物原子を含む第２半導体層を形成し、前記第２半導体層の少なくとも一部がポーラス化したポーラス層を形成することを含む。前記方法はさらに、前記ポーラス層上に、第１デバイスを含む第１膜を形成し、第２デバイスを含む第２膜が設けられた第２基板を用意し、前記第１基板と前記第２基板とを、前記第１膜および前記第２膜を挟むように貼り合わせることを含む。前記方法はさらに、前記第１基板上に前記ポーラス層の第１部分が残存し、前記第２基板上に前記ポーラス層の第２部分が残存するように、前記第１基板と前記第２基板とを分離することを含む。【選択図】図３