SEMICONDUCTOR DEVICE, MANUFACTURING METHOD THEREOF, AND POWER CONVERSION DEVICE

• Main Authors: IMOTO YUJI, FUJINO JUNJI, OGAWA SHOHEI, OGAWA MICHIO, KAWAZOE CHIKA
• Format: Patent
• Language: English; Japanese
• Published: 18.02.2022
• Subjects: BASIC ELECTRIC ELEMENTS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS; PRINTED CIRCUITS; SEMICONDUCTOR DEVICES

To provide a semiconductor device capable of reducing the thermal resistance between a heat radiating member and a wiring board without a metal layer of the wiring board being limited to Al.SOLUTION: A substrate device 100 includes an Al-made heat dissipation member 1, a wiring board 2 to which a first metal layer 2b made of Cu is bonded on the heat dissipation member 1 via a bonding member 10, and a semiconductor element 4 bonded via a solder 3 on a second metal layer 2c of the wiring board 2. The bonding member 10 includes a first bonding layer 10a made of Cu and a second bonding layer 10b made of Al provided on the first bonding layer 10a. A substrate portion 1a of the heat dissipation member 1 and the first bonding layer 10a of the bonding member 10 are solid-phase diffusion bonded, and the first metal layer 2b of the wiring board 2 and the second bonding layer 10b of the bonding member 10 are solid-phase diffusion bonded.SELECTED DRAWING: Figure 1 【課題】配線基板の金属層がＡｌ製に限られることなく、放熱部材と配線基板との間の熱抵抗を低減することができる半導体装置を得る。【解決手段】半導体装置１００は、Ａｌ製の放熱部材１と、放熱部材１上に接合部材１０を介してＣｕ製の第１金属層２ｂが接合された配線基板２と、配線基板２の第２金属層２ｃ上にはんだ３を介して接合された半導体素子４と、を備える。接合部材１０は、Ｃｕ製の第１接合層１０ａ及び第１接合層１０ａ上に設けられたＡｌ製の第２接合層１０ｂを有する。放熱部材１の基板部１ａと接合部材１０の第１接合層１０ａとが固相拡散接合され、配線基板２の第１金属層２ｂと接合部材１０の第２接合層１０ｂとが固相拡散接合されている。【選択図】図１