INSPECTION DEVICE AND INSPECTION METHOD

• Main Author: OGIWARA TAKAFUMI
• Format: Patent
• Language: English; Japanese
• Published: 10.02.2022
• Subjects: BASIC ELECTRIC ELEMENTS; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR; PERFORMING OPERATIONS; SEMICONDUCTOR DEVICES; SOLDERING OR UNSOLDERING; TRANSPORTING; WELDING; WORKING BY LASER BEAM

To easily estimate a wafer processing state.SOLUTION: An inspection device 1 includes: a light source 31 which irradiates a wafer 20 with a laser beam; an AF unit 71 functioning as a measurement unit which measures the displacement of the rear surface 21b (measurement target surface) which is an incident plane of a laser beam L on the wafer 20; and a control unit 8. The control unit 8 is configured to execute: controlling the light source 31 so that one or a plurality of modification regions are formed inside the wafer 20 by the irradiation of the wafer 20 with the laser beam L; controlling the AF unit 71 so that the displacement after processing, which is the displacement of the rear surface 21b after the irradiation with the laser beam L, can be measured; and deriving information related to the estimation of the processing state of the wafer 20, based on the displacement after processing measured by the AF unit 71.SELECTED DRAWING: Figure 4 【課題】ウエハの加工状態をより容易に推定すること。【解決手段】検査装置１は、ウエハ２０にレーザ光を照射する光源３１と、ウエハ２０におけるレーザ光Ｌの入射面である裏面２１ｂ（測定対象面）の変位を測定する測定部としてのＡＦユニット７１と、ウエハ２０にレーザ光Ｌが照射されることによりウエハ２０の内部に一又は複数の改質領域が形成されるように光源３１を制御することと、レーザ光Ｌが照射された後の裏面２１ｂの変位である加工後変位が測定されるようにＡＦユニット７１を制御することと、ＡＦユニット７１によって測定された加工後変位に基づき、ウエハ２０の加工状態の推定に係る情報を導出することと、を実行するように構成された制御部８と、を備えている。【選択図】図４