LUMINOUS SEMICONDUCTOR COMPOUND AND MANUFACTURING METHOD THEREOF

To provide a luminous semiconductor compound having a fully grown crystal.SOLUTION: A compound having a perovskite type crystal structure with A, B, and X as constituents [in a perovskite type crystal structure, A is a component located at each vertex of a hexahedron centered on B, a monovalent cati...

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Bibliographic Details
Main Authors NAITO SHOTA, SUGIUCHI MIZUHO
Format Patent
LanguageEnglish
Japanese
Published 10.02.2022
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Summary:To provide a luminous semiconductor compound having a fully grown crystal.SOLUTION: A compound having a perovskite type crystal structure with A, B, and X as constituents [in a perovskite type crystal structure, A is a component located at each vertex of a hexahedron centered on B, a monovalent cation, and B is a hexahedron with A at a vertex, a component located at the center of an octahedron with X at an apex, a metal ion, X is a component located at each vertex of an octahedron centered on B, and at least one kind of anion selected from the group consisting of halide ions and thiocyanate ions.], the compound has a particle size of primary particles of 100 nm to 1.0 μm, and in an X-ray diffraction pattern, shows a peak of the Miller index (110) plane of a half value width 0.10° to 0.30°.SELECTED DRAWING: None 【課題】十分に成長した結晶を有する発光性の半導体化合物を提供すること。【解決手段】A、B、及びXを構成成分とするペロブスカイト型結晶構造[ペロブスカイト型結晶構造において、AはBを中心とする6面体の各頂点に位置する成分であって、1価の陽イオンであり、BはAを頂点に配置する6面体、及びXを頂点に配置する8面体の中心に位置する成分であって、金属イオンであり、XはBを中心とする8面体の各頂点に位置する成分であって、ハロゲン化物イオン、及びチオシアン酸イオンからなる群より選ばれる少なくとも一種の陰イオンである。]を有する化合物であって、該化合物は、100nm~1.0μmの一次粒子の粒子径を有し、X線回折パターンにおいて、半値幅0.10°~0.30°のミラー指数(110)面のピークを示す、化合物。【選択図】なし
Bibliography:Application Number: JP20200128535