PROCESSING LIQUID AND SUBSTRATE PROCESSING METHOD

• Main Authors: KUMAGAI TOMOYA, SUGAWARA MAI
• Format: Patent
• Language: English; Japanese
• Published: 09.02.2022
• Subjects: ANIMAL AND VEGETABLE OILS, FATS, FATTY SUBSTANCES AND WAXES; APPARATUS SPECIALLY ADAPTED THEREFOR; BASIC ELECTRIC ELEMENTS; CANDLES; CHEMISTRY; CINEMATOGRAPHY; DETERGENT COMPOSITIONS; DETERGENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; ELECTROGRAPHY; FATTY ACIDS THEREFROM; HOLOGRAPHY; MATERIALS THEREFOR; METALLURGY; ORIGINALS THEREFOR; PHOTOGRAPHY; PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES; PHYSICS; RECOVERY OF GLYCEROL; RESIN SOAPS; SEMICONDUCTOR DEVICES; SOAP OR SOAP-MAKING; USE OF SINGLE SUBSTANCES AS DETERGENTS

To provide a processing liquid having good strippability of a negative resist from a substrate, and to provide a substrate processing method using the processing liquid.SOLUTION: The processing liquid for stripping a negative resist contains more than 20 mass% and less than 60 mass% of an alkanolamine (A), more than 20 mass% and less than 60 mass% of an amide-based solvent (B), 3 mass% or more and less than 25 mass% of an aprotic polar solvent (C), and more than 3 mass% and 25 mass% or less of water (D). The total content of the components is 75 mass% or more and 100 mass% or less. The mass ratio of the content of the alkanolamine (A) to the content of the water (D) is 1.2 or more. The content of the amide-based solvent (B) is higher than the content of the aprotic polar solvent (C).SELECTED DRAWING: None 【課題】ネガ型レジストの基板からの剥離性が良好な処理液、及び、当該処理液を用いた基板の処理方法の提供。【解決手段】アルカノールアミン（Ａ）を２０質量％超６０質量％未満含有し、アミド系溶媒（Ｂ）を２０質量％超６０質量％未満含有し、非プロトン性極性溶媒（Ｃ）を３質量％以上２５質量％未満含有し、水（Ｄ）を３質量％超２５質量％以下含有し、これら各成分の合計含有量は、７５質量％以上１００質量％以下であり、アルカノールアミン（Ａ）の含有量と水（Ｄ）の含有量との質量比率は、１．２以上であり、アミド系溶媒（Ｂ）の含有量は、非プロトン性極性溶媒（Ｃ）の含有量よりも多い、ネガ型レジスト剥離用の処理液。【選択図】なし