SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME

To provide an element separation structure of a fin semiconductor device and a manufacturing method of the same.SOLUTION: A FinFET deposits a first liner 401 made of a first material to fill a recess between a first semiconductor fin 52 and a second semiconductor fin. The first liner is annealed to...

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Bibliographic Details
Main Authors XU ZHI AN, CHUI CHI ON, LU YUNGNG, KAO WAN-YI, WANG CHUNYAO
Format Patent
LanguageEnglish
Japanese
Published 03.02.2022
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:To provide an element separation structure of a fin semiconductor device and a manufacturing method of the same.SOLUTION: A FinFET deposits a first liner 401 made of a first material to fill a recess between a first semiconductor fin 52 and a second semiconductor fin. The first liner is annealed to transform the first material into a second material. A second liner 501 made of a third material is deposited to fill the recess. The second liner is annealed to transform the third material into a fourth material.SELECTED DRAWING: Figure 6A 【課題】フィン半導体装置の素子分離構造及びその製造方法を提供する。【解決手段】ＦｉｎＦＥＴは、第１の半導体フィン５２と第２の半導体フィンとの間の凹部を埋めるように、第１の材料からなる第１のライナー４０１を堆積する。第１のライナーは、第１の材料を第２の材料に変質させるためにアニールされる。凹部を埋めるように、第３の材料からなる第２のライナー５０１を堆積する。第２のライナーは、第３の材料を第４の材料に変質させるためにアニールされる。【選択図】図６Ａ
Bibliography:Application Number: JP20210120571