POLARIZATION ROTATION ANGLE EXTRACTION METHOD

• Main Author: HATTORI RYO
• Format: Patent
• Language: English; Japanese
• Published: 01.02.2022
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES; MEASURING; PHYSICS; SEMICONDUCTOR DEVICES; TESTING

To provide a polarization rotation angle extraction method capable of quantitatively evaluating crystalline of a semiconductor wafer.SOLUTION: A polarization rotation angle extraction method of the present invention, comprises: a first measurement step of measuring an intensity distribution IvW(x,y) measured by an imaging part when polarization directions of a first polarizer and a second polarizer are set to be orthogonal; a second measurement step of measuring an intensity distribution IpW(x,y) measured by the imaging part when the polarization directions of the first polarizer and the second polarizer are set to be parallel; a third measurement step of measuring an intensity distribution IvB(x,y) measured by the imaging part when the polarization directions of the first polarizer and the second polarizer are set to be orthogonal and a semiconductor wafer is removed; a fourth measurement step of measuring an intensity distribution IpB(x,y) measured by the imaging part when the polarization directions of the first polarizer and the second polarizer are set to be parallel and the semiconductor wafer is removed; and a calculation step of calculating a polarization rotation angle θ(x,y) by the following formula 1 from the intensity distributions measured by the first to fourth measurement steps.SELECTED DRAWING: Figure 1 【課題】本発明は、半導体ウェハの結晶性を定量的に評価できる偏光回転角抽出方法の提供を目的とする。【解決手段】本発明の偏光回転角抽出方法は、第１偏光子及び第２偏光子の偏光方向を垂直とした場合に撮像部で計測される強度分布ＩｖＷ（ｘ，ｙ）を計測する第１計測工程と、第１偏光子及び第２偏光子の偏光方向を平行とした場合に撮像部で計測される強度分布ＩｐＷ（ｘ，ｙ）を計測する第２計測工程と、第１偏光子及び第２偏光子の偏光方向を垂直とし、かつ半導体ウェハを取り除いた場合に撮像部で計測される強度分布ＩｖＢ（ｘ，ｙ）を計測する第３計測工程と、第１偏光子及び第２偏光子の偏光方向を平行とし、かつ半導体ウェハを取り除いた場合に撮像部で計測される強度分布ＩｐＢ（ｘ，ｙ）を計測する第４計測工程と、第１計測工程から第４計測工程で計測された強度分布から下記式１により偏光回転角θ（ｘ，ｙ）を算出する算出工程とを備える。TIFF2022020435000008.tif13165【選択図】図１