POWER CONVERSION DEVICE

To obtain a power conversion device capable of improving heat radiation property of a power semiconductor module and uniformize the heat radiation property regardless of its installation place.SOLUTION: The power conversion device includes a power semiconductor module, a capacitor, a heat sink conne...

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Bibliographic Details
Main Author TANI MASAKAZU
Format Patent
LanguageEnglish
Japanese
Published 27.01.2022
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Summary:To obtain a power conversion device capable of improving heat radiation property of a power semiconductor module and uniformize the heat radiation property regardless of its installation place.SOLUTION: The power conversion device includes a power semiconductor module, a capacitor, a heat sink connected to the power semiconductor module, a cooling fin, a first partition plate facing the heat sink, a cooling flow passage in which coolant flows between the heat sink and the first partition plate in a direction perpendicular to a first side face, a second partition plate extending from the first partition plate and extending from a third side face side to a fourth side face side, an inflow passage extending from a coolant inflow port along another face of the first partition plate and a face at a first side face side of the second partition plate, and connected to a first side face side of the cooling flow passage, and an outflow passage extending from a coolant outflow port along another face of the first partition plate and a face at a second side face side of the second partition plate, and connected to a second side face side of the cooling flow passage. The length of the first side face of the power semiconductor module is longer than the length of the third side face.SELECTED DRAWING: Figure 4 【課題】パワー半導体モジュールの放熱性を向上させると共に、場所によらず放熱性を均一にすることができる電力変換装置を得ること。【解決手段】パワー半導体モジュールと、コンデンサと、パワー半導体モジュールに接続されたヒートシンクと、冷却フィンと、ヒートシンクと対向した第一の仕切り板と、ヒートシンクと第一の仕切り板との間を第1の側面とは垂直な方向に冷媒が流れる冷却流路と、第一の仕切り板から延出し第3の側面の側から第4の側面の側に延出する第二の仕切り板と、冷媒流入口から第一の仕切り板の他方の面及び第二の仕切り板の第1の側面の側の面に沿って延び冷却流路の第1の側面の側に接続された流入流路と、冷媒流出口から第一の仕切り板の他方の面及び第二の仕切り板の第2の側面の側の面に沿って延び冷却流路の第2の側面の側に接続された流出流路とを備え、パワー半導体モジュールの第1の側面の長さは第3の側面の長さよりも長い。【選択図】図4
Bibliography:Application Number: JP20200122580