SEMICONDUCTOR DEVICE

• Main Authors: SUZUKI TAKUMA, GOTO KAZUHISA, OBATA SUSUMU, OTA CHIHARU, KANIE SOZO
• Format: Patent
• Language: English; Japanese
• Published: 27.01.2022
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

To provide a semiconductor device capable of improving reliability of a gate insulating layer.SOLUTION: A semiconductor device according to an embodiment comprises: a silicon carbide layer having a first surface and a second surface, the silicon carbide layer including a first silicon carbide region of a first conductivity type, a second silicon carbide region of a second conductivity type between the first silicon carbide region and the first surface, a third silicon carbide region of the second conductivity type between the first silicon carbide region and the first surface, a fourth silicon carbide region of the first conductivity type between the second silicon carbide region and the first surface, a fifth silicon carbide region of the first conductivity type between the third silicon carbide region and the first surface, a sixth silicon carbide region of the second conductivity type located between the first silicon carbide region and the first surface and between the second silicon carbide region and the third silicon carbide region, and a crystal defect at least partially located in the sixth silicon carbide region; a gate electrode; a gate insulating layer located between the gate electrode and the sixth silicon carbide region; a first electrode on the first surface; and a second electrode on the second surface.SELECTED DRAWING: Figure 1 【課題】ゲート絶縁層の信頼性の向上が可能な半導体装置を提供する。【解決手段】実施形態の半導体装置は、第１の面と第２の面を有し、第１導電形の第１の炭化珪素領域と、第１の炭化珪素領域と第１の面との間の第２導電形の第２の炭化珪素領域と、第１の炭化珪素領域と第１の面との間の第２導電形の第３の炭化珪素領域と、第２の炭化珪素領域と第１の面との間の第１導電形の第４の炭化珪素領域と、第３の炭化珪素領域と第１の面との間の第１導電形の第５の炭化珪素領域と、第１の炭化珪素領域と第１の面との間に位置し、第２の炭化珪素領域と第３の炭化珪素領域との間の第２導電形の第６の炭化珪素領域と、少なくとも一部が第６の炭化珪素領域の中に位置する結晶欠陥と、を含む炭化珪素層と、ゲート電極と、ゲート電極と第６の炭化珪素領域の間に位置するゲート絶縁層と、第１の面上の第１の電極と、第２の面上の第２の電極と、を備える。【選択図】図１