SEMICONDUCTOR STORAGE DEVICE

To provide a semiconductor storage device in which information for identifying causes of malfunction is acquired.SOLUTION: A semiconductor storage device 10 of the embodiment includes: memory cell arrays 111 and 112 for storing data; a peripheral circuit section that writes the data to the memory ce...

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Bibliographic Details
Main Author HIRAYAMA KAZUNORI
Format Patent
LanguageEnglish
Japanese
Published 25.01.2022
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Summary:To provide a semiconductor storage device in which information for identifying causes of malfunction is acquired.SOLUTION: A semiconductor storage device 10 of the embodiment includes: memory cell arrays 111 and 112 for storing data; a peripheral circuit section that writes the data to the memory cell arrays 111, and 112, and reads the data from the memory cell arrays 111 and 112; and a sampling circuit 220 that executes a sampling process, which is a process of sampling a signal of a predetermined node in the peripheral circuit section.SELECTED DRAWING: Figure 1 【課題】半導体記憶装置において発生した不具合の原因を特定するための情報を取得する。【解決手段】実施形態の半導体記憶装置10は、データを記憶するメモリセルアレイ111,112と、メモリセルアレイ111,112に対するデータの書き込み、及び、メモリセルアレイ111,112からのデータの読み出し、を行う周辺回路部と、周辺回路部における所定のノードの信号をサンプリングする処理、であるサンプリング処理を実行するサンプリング回路220と、を備える。【選択図】図1
Bibliography:Application Number: JP20200120115