IMAGE SENSOR AND IMAGING APPARATUS

• Main Authors: WATABE HEIJI, ETO KOJI, SHIMURA TAKAYOSHI
• Format: Patent
• Language: English; Japanese
• Published: 27.12.2021
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC COMMUNICATION TECHNIQUE; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; PICTORIAL COMMUNICATION, e.g. TELEVISION; SEMICONDUCTOR DEVICES

To apply a voltage source for electric field generation of low voltage, and make the time resolution smaller while simplifying and downsizing the structure.SOLUTION: An image sensor includes a photoelectric conversion layer 35 made of germanium, which is a cylinder having predetermined thickness and generates an amount of electric charge according to the amount of incident light from the light incident from a back surface 2, a circuit diffusion layer 9 made of silicon, which corresponds to a pixel and surrounds the entire area of the sides of the photoelectric conversion layer 35 as a center, and a plurality of charge collection gate electrodes 7 and 11 provided on the surface side of the circuit diffusion layer 9 via an insulating layer 39 and radially arranged at equal distances from the center 10 of the photoelectric conversion layer 35. The photoelectric conversion layer 35 is set to be 2 to 3 times the average penetration depth of red light incident on germanium, and its thickness dimension corresponds to the thickness of the circuit diffusion layer 9.SELECTED DRAWING: Figure 12 【課題】構造を簡易かつ小型化しつつ、低電圧の電界生成用電圧源を適用可能で、時間分解能をより小さくする。【解決手段】イメージセンサは、所定の厚さを有する円柱であって、裏面２から入射する光から、入射量に応じた量の電荷を生起するゲルマニウムからなる光電変換層３５と、画素に対応し、光電変換層３５を中心にして、その側面の全域の周囲を囲繞するシリコンからなる回路拡散層９と、回路拡散層９の表面側に絶縁層３９を介して設けられ、光電変換層３５の中心１０からの距離が等しい位置に放射状に配置された複数の電荷収集ゲート電極７，１１とを備える。光電変換層３５は、ゲルマニウムに入射する赤色光の平均侵入長の２〜３倍に設定され、その厚さ寸法は回路拡散層９の厚さに対応している。【選択図】図１２