PHOTOELECTRIC CONVERSION THIN FILM ELEMENT AND MANUFACTURING METHOD THEREOF

• Main Authors: MINAMI SATOSHI, OKU TAKEO, SUZUKI ATSUSHI, OKITA MASANOBU, FUKUNISHI SAKIKO, TACHIKAWA TOMOHARU, KANDORI SATSUKI, NISHI KOSUKE, TAGUCHI MASAYA
• Format: Patent
• Language: English; Japanese
• Published: 23.12.2021
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

To provide a perovskite-type photoelectric conversion element which shows high durability even when a perovskite layer is formed by high-temperature heat treatment in the atmosphere, and a manufacturing method thereof.SOLUTION: A photoelectric conversion element is manufactured that includes perovskite layers 3a and 3b containing a compound having a perovskite-type structure, a polysilane layer 5 containing polysilane, and an electron block layer 4 interposed between the perovskite layer 3a, 3b and the polysilane layer 5 and including a p-type semiconductor.SELECTED DRAWING: Figure 1 【課題】大気中で高温熱処理によりペロブスカイト層を形成しても、高い耐久性を示すペロブスカイト型の光電変換素子およびその製造方法を提供する。【解決手段】ペロブスカイト型構造を有する化合物を含むペロブスカイト層３ａ、３ｂと、ポリシランを含むポリシラン層５と、ペロブスカイト層３ａ、３ｂおよびポリシラン層５の間に介在し、かつｐ型半導体を含む電子ブロック層４とを含む光電変換素子を製造する。【選択図】図１