METHOD OF PRODUCING ANIONICALLY MODIFIED COLLOIDAL SILICA

• Main Author: MAE RYOTA
• Format: Patent
• Language: English; Japanese
• Published: 13.12.2021
• Subjects: ADHESIVES; BASIC ELECTRIC ELEMENTS; CHEMISTRY; COMPOUNDS THEREOF; DRESSING OR CONDITIONING OF ABRADING SURFACES; DYES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS; GRINDING; INORGANIC CHEMISTRY; MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FORELSEWHERE; METALLURGY; MISCELLANEOUS APPLICATIONS OF MATERIALS; MISCELLANEOUS COMPOSITIONS; NATURAL RESINS; NON-METALLIC ELEMENTS; PAINTS; PERFORMING OPERATIONS; POLISHES; POLISHING; SEMICONDUCTOR DEVICES; TRANSPORTING

To provide a method of producing anionically modified colloidal silica capable of polishing a silicon nitride film at a high speed and suppressing a polishing speed of a silicon oxide film.SOLUTION: A method of producing anionically modified colloidal silica includes: ion exchanging raw colloidal silica with an ion exchange resin (ion exchange step); and anionically modifying the ion-exchanged raw colloidal silica to obtain anionically modified colloidal silica (modification step).SELECTED DRAWING: None 【課題】窒化ケイ素膜を高速で研磨し、かつ、酸化ケイ素膜の研磨速度を抑えることができるアニオン変性コロイダルシリカの製造方法を提供する。【解決手段】原料コロイダルシリカをイオン交換樹脂を用いてイオン交換するイオン交換工程と、イオン交換した原料コロイダルシリカをアニオン変性して、アニオン変性コロイダルシリカを得る変性工程と、を含む、アニオン変性コロイダルシリカの製造方法。【選択図】なし