SEMICONDUCTOR DEVICE

To suppress increase in size of a semiconductor device in which two inductors are provided.SOLUTION: A semiconductor device comprises: a first substrate; a multilayer wiring layer that is formed on the first substrate; a first inductor that is formed in a meander shape in a plan view in the multilay...

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Bibliographic Details
Main Authors NAKASHIBA YASUTAKA, KUWABARA SHINICHI, UCHIDA SHINICHI
Format Patent
LanguageEnglish
Japanese
Published 02.12.2021
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Summary:To suppress increase in size of a semiconductor device in which two inductors are provided.SOLUTION: A semiconductor device comprises: a first substrate; a multilayer wiring layer that is formed on the first substrate; a first inductor that is formed in a meander shape in a plan view in the multilayer wiring layer; and a second inductor that is formed in the meander shape in the plan view in the multilayer wiring layer, that is close to the first inductor in the plan view, and that is arranged not to overlap with the first inductor. A transformer is composed of the first inductor and the second inductor, and in the plan view the first inductor and the second inductor extend along a first direction in which an edge of the first substrate extends.SELECTED DRAWING: Figure 2 【課題】二つのインダクタを設ける半導体装置の大型化を抑制する。【解決手段】半導体装置は、第1基板と、第1基板上に形成された多層配線層と、多層配線層に平面視においてミアンダ形状に形成された第1インダクタと、多層配線層に平面視においてミアンダ形状に形成され、平面視において第1インダクタと近接し、かつ、重ならないよう配置された第2インダクタと、を備える。第1インダクタと第2インダクタとによりトランスフォーマーを構成し、平面視において、第1インダクタ及び第2インダクタは第1基板の1辺が延伸する第1方向に沿って延伸している。【選択図】図2
Bibliography:Application Number: JP20200090116