SEMICONDUCTOR PHOTORESIST COMPOSITION AND METHOD OF FORMING PATTERNS USING THE COMPOSITION

To provide a semiconductor photoresist composition having improved resolution, sensitivity, etching resistance, and pattern-forming capability.SOLUTION: A semiconductor photoresist composition includes (A) an organometallic compound, (B) an organic acid having a vapor pressure of less than or equal...

Full description

Saved in:
Bibliographic Details
Main Authors CHEON HWAN-SUNG, CHAE SEUNGYONG, WOO CHANG SOO, MOON KYUNG SOO, NAMGUNG RAN, KIM JAE-HYUN, HAN SEUNG
Format Patent
LanguageEnglish
Japanese
Published 18.11.2021
Subjects
APPARATUS SPECIALLY ADAPTED THEREFOR
CINEMATOGRAPHY
ELECTROGRAPHY
HOLOGRAPHY
MATERIALS THEREFOR
ORIGINALS THEREFOR
PHOTOGRAPHY
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES
PHYSICS
Online AccessGet full text

Cover

More Information
Summary:To provide a semiconductor photoresist composition having improved resolution, sensitivity, etching resistance, and pattern-forming capability.SOLUTION: A semiconductor photoresist composition includes (A) an organometallic compound, (B) an organic acid having a vapor pressure of less than or equal to 1.0 mmHg at 25°C, and a pKa of 3 to 5, and (C) a solvent. There is also provided a method of forming a pattern with the composition.SELECTED DRAWING: Figure 5 【課題】解像度、感度、エッチング耐性、およびパターン形成性に優れた半導体フォトレジスト用組成物を提供する。【解決手段】（Ａ）有機金属化合物、（Ｂ）２５℃で蒸気圧が１．０ｍｍＨｇ以下であり、かつｐＫａが３〜５である有機酸、および（Ｃ）溶媒を含む半導体フォトレジスト用組成物、およびこれを用いたパターン形成方法。【選択図】図５
Bibliography:Application Number: JP20210078454