LASER DIODE BAR, WAVELENGTH BEAM COMBINING SYSTEM USING LASER DIODE BAR, AND MANUFACTURING METHOD FOR LASER DIODE BAR

• Main Authors: ONO HIROSHI, UEDA AKIO
• Format: Patent
• Language: English; Japanese
• Published: 11.11.2021
• Subjects: BASIC ELECTRIC ELEMENTS; DEVICES USING STIMULATED EMISSION; ELECTRICITY

To improve oscillation performance of a wavelength beam combining system.SOLUTION: A laser diode bar to be used for a wavelength beam combining system comprises: a nitride semiconductor substrate having a substrate surface which has a (0001) plane as a plane direction and to which an off-angle larger than 0° is granted from the (0001) plane to at least either a m-axis or a-axis; a laminate structure which is formed on the nitride semiconductor substrate composed of a first conductivity type clad layer, active layer, and second conductivity type clad layer; and a plurality of emitters formed in a stripe shape on the laminate structure so that waveguide directions of the emitters are perpendicular to a main axial direction of the off-angle.SELECTED DRAWING: Figure 10 【課題】波長ビーム結合システムの発振性能を向上させる。【解決手段】波長ビーム結合システムに用いられるレーザーダイオードバーであって、（０００１）面を面方位とし、且つ、（０００１）面からｍ軸又はａ軸の少なくとも一方の軸に０°より大きいオフ角を付与された基板面を有する窒化物半導体基板と、前記窒化物半導体基板上に形成された第１導電型クラッド層、活性層、及び第２導電型クラッド層からなる積層構造体と、エミッターの導波路方向が前記オフ角の主軸方向に対して垂直となるように、前記積層構造体に、ストライプ状に形成された複数のエミッターと、を備えるレーザーダイオードバー。【選択図】図１０