SUBSTRATE PROCESSING APPARATUS

• Main Authors: SON JEONG LIM, KIM JUHO, LEE SEUNG SEOB, PARK KYUNG, KIM JOO SUOP
• Format: Patent
• Language: English; Japanese
• Published: 28.10.2021
• Subjects: BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; SEMICONDUCTOR DEVICES; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

To provide a substrate processing apparatus capable of minimizing various types of imperfection existing in a thin film before, during or after forming a thin film on a substrate.SOLUTION: A substrate processing apparatus includes: an outer tube 20 which has a protective space 22 therein and a first inlet at the lower part thereof and an inner tube 30 which has a reaction space 32 therein and a second inlet at the lower part thereof and a part of which is accommodated into the outer tube and in which a part formed with the second inlet is projected downward of the outer tube.SELECTED DRAWING: Figure 1 【課題】基板に薄膜を形成する前、薄膜を形成する途中又は薄膜を形成した後にも、薄膜に存在する様々な不完全性を最小化することができる基板処理装置を提供する。【解決手段】基板処理装置において、内部に保護空間２２を形成し、下部に第１の入口が形成されたアウターチューブ２０と、内部に反応空間３２を形成し、下部に第２の入口が形成されており、一部がアウターチューブに受容され、第２の入口が形成された部分がアウターチューブの下方に突出されたインナーチューブ３０とを含む。【選択図】図１