SUBSTRATE PROCESSING APPARATUS

• Main Authors: SON JEONG LIM, KIM BYUNG JO, KIM JUHO, LEE SEUNG SEOB, PARK KYUNG, KIM YOUNG JUN, KIM JOO SUOP
• Format: Patent
• Language: English; Japanese
• Published: 28.10.2021
• Subjects: BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; SEMICONDUCTOR DEVICES; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

To provide a substrate processing apparatus capable of restricting a damage range to the inside of an outer tube even when an inner tube is damaged, by maintaining a pressure between the outer tube and the inner tube to be higher than a reaction space of the inner tube during a process for substrate processing.SOLUTION: A substrate processing apparatus is configured so that gas utility includes an outer exhaust part 791, an inner exhaust 792 and an external exhaust device 793 for exhausting a reaction space and a protective space 22, respectively to execute a transformation process including a high process higher than a normal pressure and a low pressure process than a normal pressure for a plurality of substrates flowed into a reaction space 32. By connecting with a vacuum pump 750 capable of pumping as well as executing independent gas supply and exhaust to/from the reaction space and the protective space, the protective space can be maintained to be lower than a normal pressure and to be higher than a pressure of the reaction space even in executing a low pressure process in the reaction space.SELECTED DRAWING: Figure 5 【課題】基板処理のための工程期間中、アウターチューブとインナーチューブと間の圧力をインナーチューブの反応空間より高く維持することによって、インナーチューブが損傷された場合にも、アウターチューブの内部に損傷範囲を制限することができる基板処理装置を提供する。【解決手段】基板処理装置において、ガスユーティリティは、反応空間３２に流入された複数の基板に対して、常圧より高い高圧工程と常圧より低い低圧工程とを含む変圧工程を行えるように、反応空間及び保護空間２２をそれぞれ排気するアウター排気部７９１、インナー排気部７９２及び外部排気装置７９３を備える。また、反応空間と保護空間に対する独立的なガス供給及び排気だけでなく、ポンピング可能な真空ポンプ７５０と連結されることによって、、反応空間における低圧工程実行にも保護空間が常圧よりも低く、反応空間の圧力よりも高圧に維持できる。【選択図】図５