GALLIUM NITRIDE SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

• Main Authors: NAGAYA MASATAKE, HARA KAZUTO, ONDA SHOICHI, SASAOKA CHIAKI, KOJIMA ATSUSHI, KAWAGUCHI DAISUKE
• Format: Patent
• Language: English; Japanese
• Published: 28.10.2021
• Subjects: AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR; BASIC ELECTRIC ELEMENTS; CHEMISTRY; CLADDING OR PLATING BY SOLDERING OR WELDING; CRYSTAL GROWTH; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR; METALLURGY; PERFORMING OPERATIONS; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; REFINING BY ZONE-MELTING OF MATERIAL; SEMICONDUCTOR DEVICES; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; SINGLE-CRYSTAL-GROWTH; SOLDERING OR UNSOLDERING; TRANSPORTING; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; WELDING; WORKING BY LASER BEAM

To provide a GaN semiconductor device capable of obtaining high adhesion of a back electrode in a vertical GaN device, and a manufacturing method thereof.SOLUTION: A gallium nitride semiconductor device includes: a chip configuration board 110 which is made of GaN, has one surface 110a and another surface 110b on the opposite side to the one surface 110a, and in which on the one surface 110a side, a one-sided side element component 11 which is a component on the one surface 110a side of the semiconductor element is formed, and a metal film 61 constituting a back electrode in contact with the other surface 110b. The other surface 110b has irregularities composed of a plurality of convex portions forming a cross-sectional trapezoidal shape and concave portions located between the convex portions, and the upper and lower surfaces of the cross-sectional trapezoidal shape formed by each of the plurality of convex portions face the one surface 110a.SELECTED DRAWING: Figure 4B 【課題】縦型ＧａＮデバイスにおける裏面電極の高い密着性を得ることができるＧａＮ半導体装置およびその製造方法を提供する。【解決手段】ＧａＮで構成され、一面１１０ａと該一面１１０ａと反対側の他面１１０ｂとを有し、一面１１０ａ側において、半導体素子のうちの一面１１０ａ側の構成部分となる一面側素子構成部分１１が形成されたチップ構成基板１１０と、他面１１０ｂに接触させられた裏面電極を構成する金属膜６１と、を有した構成とする。そして、他面１１０ｂが、断面台形状を成す複数の凸部および該凸部の間に位置する凹部による凹凸を有し、複数の凸部それぞれが構成する断面台形状の上底面が、一面１１０ａに対向するようにする。【選択図】図４Ｂ