PRODUCTION METHOD FOR WAFER

To provide a production method for a wafer, which can efficiently produce the wafer from an ingot to reduce a discarded amount.SOLUTION: In a production method for a wafer according to the present invention, a wafer W is produced from ingot 20 comprising a top surface 20a, an undersurface 20b, and a...

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Bibliographic Details
Main Author NOMARU KEIJI
Format Patent
LanguageEnglish
Japanese
Published 21.10.2021
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Summary:To provide a production method for a wafer, which can efficiently produce the wafer from an ingot to reduce a discarded amount.SOLUTION: In a production method for a wafer according to the present invention, a wafer W is produced from ingot 20 comprising a top surface 20a, an undersurface 20b, and a side surface 20c. The production method for the wafer includes: a modified layer formation step of forming a modified layer 100 around the entire perimeter of the side surface 20c or in an arc shape by irradiating the ingot 20 with a laser beam LB1 with a wavelength having permeability in such a manner that a light concentration point of the laser beam is positioned on the inside from the side surface 20c in a position corresponding to the thickness of the wafer to be produced; a separating layer formation step of forming separating layers 120 and 130 by applying an external force from the top surface 20a of the ingot 20 and concentrating stress on a crack C1 extended inward from the modifying layer 100 so as to make the crack C1 progress inward from the side of the side surface 20c; and a wafer production step of producing the wafer by separating the wafer W to be produced from the ingot 20 in such a manner that the separating layers 120 and 130 serve as starting points.SELECTED DRAWING: Figure 4 【課題】インゴットからウエーハを効率よく生成し、捨てられる量を軽減することができるウエーハの生成方法を提供する。【解決手段】本発明によれば、上面20aと、下面20bと、側面20cとを備えたインゴット20からウエーハWを生成するウエーハの生成方法であって、インゴット20に対して透過性を有する波長のレーザー光線LB1の集光点を、生成すべきウエーハの厚みに相当する位置の側面20cから内部に位置付けて照射して改質層100を側面20cの全周にわたって、又は円弧状に形成する改質層形成工程と、インゴット20の上面20aから外力を付与して改質層100から内部に延びる亀裂C1に応力を集中させ亀裂C1を側面20c側から内部に向かって進展させて剥離層120、130を形成する剥離層形成工程と、剥離層120、130を起点として生成すべきウエーハWをインゴット20から剥離してウエーハを生成するウエーハ生成工程と、を含み構成されるウエーハの生成方法が提供される。【選択図】図4
Bibliography:Application Number: JP20200071076