SPUTTERING APPARATUS AND FILM DEPOSITION METHOD USING THE SAME

• Main Authors: AOYAMA TAKAAKI, DAIKO YOSHINORI, MIYAUCHI MITSUSUKE
• Format: Patent
• Language: English; Japanese
• Published: 11.10.2021
• Subjects: CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

To provide a sputtering apparatus having a wide set space in a film deposition process region, and a film deposition method using the same.SOLUTION: A sputtering apparatus comprises: a film deposition chamber 11 forming a film on a substrate S, a pressure reduction device 19 for forming the inside of the film deposition chamber into a reduced pressure atmosphere; a disk-shaped substrate holder 12 rotatably provided in the film deposition chamber and including a substrate holding part 14 for rotatably holding the substrate on one main surface; a drive unit 13 for rotating the substrate holder; a film deposition process region R1 formed in a space corresponding to the outer peripheral region of the substrate holder in the film deposition chamber and having a sputtering electrode 16; a reaction process region R2 formed in a space corresponding to a central region of the substrate holder in the film deposition chamber and having a plasma generator 17; and a gas introduction device 18 for introducing an electrical discharge gas and a reactant gas in the film deposition chamber.SELECTED DRAWING: Figure 2 【課題】成膜プロセス領域の設定スペースが広いスパッタ装置及びこれを用いた成膜方法を提供する。【解決手段】基板Ｓに膜を形成する成膜チャンバ１１と、前記成膜チャンバ内を減圧雰囲気にする減圧装置１９と、前記成膜チャンバ内にて回転可能に設けられ、一方の主面において前記基板を自転可能に保持する基板保持部１４を有する円盤状の基板ホルダ１２と、前記基板ホルダを回転させる駆動装置１３と、前記成膜チャンバ内の、前記基板ホルダの外周領域に対応する空間に形成され、スパッタ電極１６が設けられた成膜プロセス領域Ｒ１と、前記成膜チャンバ内の、前記基板ホルダの中心領域に対応する空間に形成され、プラズマ発生装置１７が設けられた反応プロセス領域Ｒ２と、前記成膜チャンバ内に放電ガス及び反応ガスを導入するガス導入装置１８と、を備える。【選択図】 図２