SUBSTRATE PROCESSING SYSTEM, SUBSTRATE PROCESSING METHOD, PROGRAM AND INFORMATION STORAGE MEDIUM

• Main Authors: OTA YOSHIHARU, YAHIRO SHUNICHI, ASO YUTAKA, IKEDA FUMIHIKO
• Format: Patent
• Language: English; Japanese
• Published: 30.09.2021
• Subjects: APPARATUS SPECIALLY ADAPTED THEREFOR; CINEMATOGRAPHY; ELECTROGRAPHY; HOLOGRAPHY; MATERIALS THEREFOR; ORIGINALS THEREFOR; PHOTOGRAPHY; PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES; PHYSICS

To provide a substrate processing system, capable of obtaining a desired resist pattern by local exposure and development after the local exposure when the thickness of a resist film is wholly or partially thicker.SOLUTION: A substrate processing system comprises: a first development device for developing a resist film pattern-exposed by an exposure device for pattern-exposing the resist film deposited on a substrate to form a resist pattern; a local exposure device for locally exposing the resist film in order to correct the residual film thickness of the resist pattern obtained by the first development device; and a second development device for developing the resist film exposed by the local exposure device to correct the residual film thickness of the resist pattern.SELECTED DRAWING: Figure 1 【課題】レジスト膜の膜厚が全体的または部分的に厚い場合に、局所露光および局所露光後の現像によって所望のレジストパターンを得ることができる、基板処理システムの提供。【解決手段】基板に成膜されたレジスト膜をパターン露光する露光装置でパターン露光された前記レジスト膜を現像してレジストパターンを形成する第１現像装置と、前記第１現像装置で得られた前記レジストパターンの残膜厚を補正するため、前記レジスト膜を局所的に露光する局所露光装置と、前記局所露光装置で露光された前記レジスト膜を現像し、前記レジストパターンの残膜厚を補正する第２現像装置と、を備える、基板処理システム。【選択図】図１