SEMICONDUCTOR DEVICE, POWER MODULE, INVERTER DEVICE, AND ELECTRIC VEHICLE

To solve a problem that variations occur in a clamp voltage due to increase of a voltage drop occurring in a thermistor when a value of a current flowing in the thermistor increases.SOLUTION: A semiconductor device includes a switching element to be on/off controlled, and a surge voltage protection...

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Bibliographic Details
Main Authors ARAKI TAKAHIRO, MIMA AKIRA, MAEKAWA NORIYUKI
Format Patent
LanguageEnglish
Japanese
Published 27.09.2021
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Summary:To solve a problem that variations occur in a clamp voltage due to increase of a voltage drop occurring in a thermistor when a value of a current flowing in the thermistor increases.SOLUTION: A semiconductor device includes a switching element to be on/off controlled, and a surge voltage protection circuit which is connected between a positive pole side terminal of the switching element and a control terminal of the switching element. The surge voltage protection circuit is composed of a first Zener diode, a second Zener diode connected to the first Zener diode in series, and a temperature characteristic compensation element which has a polarity of a temperature factor different from that of the first Zener diode and the second Zener diode and is connected to the second Zener diode in parallel.SELECTED DRAWING: Figure 1 【課題】サーミスタを流れる電流値が大きくなった場合に、サーミスタで発生する電圧降下が増大し、クランプ電圧にばらつきが発生する課題があった。【解決手段】オンオフ制御されるスイッチング素子と、前記スイッチング素子の正極側端子と前記スイッチング素子の制御端子との間に接続されるサージ電圧保護回路と、を備え、前記サージ電圧保護回路は、第1ツェナーダイオードと、前記第1ツェナーダイオードと直列に接続される第2ツェナーダイオードと、前記第1ツェナーダイオードおよび前記第2ツェナーダイオードとは温度係数の極性が異なり、かつ前記第2ツェナーダイオードに並列に接続される温度特性補償素子と、により構成される半導体装置。【選択図】図1
Bibliography:Application Number: JP20200051598