HEAT TREATMENT METHOD
To provide a heat treatment method capable of reducing the number of dummy wafers to be consumed.SOLUTION: After a treatment to a preceding wafer is completed, the preceding wafer is exported from a chamber of a heat treatment apparatus. A temperature inside of the chamber at the time when the prece...
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Main Authors | , |
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Format | Patent |
Language | English Japanese |
Published |
27.09.2021
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Subjects | |
Online Access | Get full text |
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Summary: | To provide a heat treatment method capable of reducing the number of dummy wafers to be consumed.SOLUTION: After a treatment to a preceding wafer is completed, the preceding wafer is exported from a chamber of a heat treatment apparatus. A temperature inside of the chamber at the time when the preceding wafer is exported from the chamber is defined as an export-time temperature and a differential between a measurement temperature inside of the chamber which is measured after the preceding wafer is exported, and the export-time temperature is calculated as a drop temperature. The calculated drop temperature is compared with a predetermined threshold. When the drop temperature is greater than the threshold, a dummy treatment is executed to preheat a structure inside of the chamber such as a susceptor by irradiating it with light from a halogen lamp and a flash lamp. When the drop temperature is equal to or smaller than the threshold, on the other hand, a treatment of a following wafer is started without executing the dummy treatment.SELECTED DRAWING: Figure 9
【課題】消費するダミーウェハーの枚数を低減することができる熱処理方法を提供する。【解決手段】先行ウェハーに対する処理が完了した後、当該先行ウェハーを熱処理装置のチャンバーから搬出する。先行ウェハーがチャンバーから搬出されたときのチャンバー内の温度を搬出時温度とし、先行ウェハーの搬出後に測定されたチャンバー内の測定温度と搬出時温度との差分を降下温度として算定する。算定された降下温度と所定の閾値とを比較する。降下温度が閾値よりも大きいときには、ハロゲンランプおよびフラッシュランプからの光照射によってサセプタ等のチャンバー内構造物を予熱するダミー処理を実行する。一方、降下温度が閾値以下のときには、ダミー処理を実行することなく後続ウェハーの処理を開始する。【選択図】図9 |
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Bibliography: | Application Number: JP20200050798 |