PHOTODETECTOR, PHOTO DETECTION SYSTEM, LIDAR DEVICE, AND VEHICLE

• Main Authors: FUJIWARA IKUO, SASAKI KEITA, ATSUTA MASAKI, SUZUKI KAZUHIRO, SHIMIZU MARIKO, OKAMOTO KAZUAKI, KWON HONAM
• Format: Patent
• Language: English; Japanese
• Published: 27.09.2021
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

To provide a photodetector, a photo detection system, a LIDAR device, and a vehicle, capable of improving sensitivity.SOLUTION: A photodetector includes an element 10 and a structure 20. The element 10 includes: a first semiconductor region 1 of a first conductivity type, a second semiconductor region 2 of the first conductivity type, and a third semiconductor region 3 of a second conductivity type. The second semiconductor region 2 is provided on the first semiconductor region 1. The third semiconductor region 3 is provided on the second semiconductor region 2. The structure 20 is provided around the element 10 on a first plane perpendicular to a first direction. The structure 20 includes a first insulation part 21, a metal-containing part 25, and a second insulation part 22. The metal-containing part 25 is provided above the first insulation part 21. At least part of the metal-containing part 25 is positioned at the same height as that of the third semiconductor region 3. The second insulation part 22 is positioned between the metal-containing part 25 and the element 10 on the first plane. The first insulation part 21's thickness is larger than the second insulation part 22's thickness on the first plane.SELECTED DRAWING: Figure 3 【課題】感度を向上可能な、光検出器、光検出システム、ライダー装置、及び車を提供する。【解決手段】光検出器は、素子１０及び構造体２０を含む。素子１０は、第１導電形の第１半導体領域１と、第１導電形の第２半導体領域２と、第２導電形の第３半導体領域３と、を含む。第２半導体領域２は、第１半導体領域１の上に設けられる。第３半導体領域３は、第２半導体領域２の上に設けられる。構造体２０は、第１方向に垂直な第１面において素子１０の周りに設けられる。構造体２０は、第１絶縁部２１、金属含有部２５、及び第２絶縁部２２を含む。金属含有部２５は、第１絶縁部２１よりも上方に設けられる。金属含有部２５の少なくとも一部は、第３半導体領域３と同じ高さに位置する。第２絶縁部２２は、前記第１面において金属含有部２５と素子１０との間に位置する。第１絶縁部２１の厚みは、前記第１面における第２絶縁部２２の厚みよりも大きい。【選択図】図３