PHOTO DETECTOR, PHOTO DETECTION SYSTEM, LIDAR DEVICE, AND MOBILE BODY

• Main Authors: FUJIWARA IKUO, ATSUTA MASAKI, SUZUKI KAZUHIRO, NOFUSA YUKI, KWON HONAM
• Format: Patent
• Language: English; Japanese
• Published: 27.09.2021
• Subjects: BASIC ELECTRIC ELEMENTS; COLORIMETRY; ELECTRIC COMMUNICATION TECHNIQUE; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT,POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRA-RED,VISIBLE OR ULTRA-VIOLET LIGHT; MEASURING; PHYSICS; PICTORIAL COMMUNICATION, e.g. TELEVISION; RADIATION PYROMETRY; SEMICONDUCTOR DEVICES; TESTING

To provide a photo detector, a photo detection system, a LIDAR device, and a mobile body, capable of suppressing noise.SOLUTION: A photo detector 10A comprises a first semiconductor layer 12 including on a first surface on which light is to be incident: a photo detection region E1 in which a plurality of photo detection units are arranged; and a peripheral region E2, a semiconductor region that is provided around the photo detection region and includes no photo detection units. Lattice defect density in a first layer region 40, at least part in a thickness direction of the peripheral region E2, is higher than lattice defect density in a second layer region 15 that is in the photo detection region E1 and is adjacent to the first layer region in a direction crossing the thickness direction.SELECTED DRAWING: Figure 2 【課題】ノイズを抑制可能な光検出素子、光検出システム、ライダー装置、および移動体を提供する。【解決手段】光検出素子１０Ａは、光の入射する第１面に、光検出部が複数配列された領域である光検出領域Ｅ１と、光検出領域の周囲に設けられ光検出部を含まない半導体領域である周辺領域Ｅ２と、を有する第１半導体層１２を備える。周辺領域Ｅ２の厚み方向における少なくとも一部の第１層領域４０の格子欠陥の密度が、光検出領域Ｅ１における該第１層領域に対して厚み方向に交差する方向に隣接する第２層領域１５の格子欠陥の密度より高い。【選択図】図２