MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE

• Main Authors: KONDO TAKEHIRO, HASHIMOTO JUNICHI, YAMAZAKI SOICHI
• Format: Patent
• Language: English; Japanese
• Published: 24.09.2021
• Subjects: APPARATUS SPECIALLY ADAPTED THEREFOR; BASIC ELECTRIC ELEMENTS; CINEMATOGRAPHY; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; ELECTROGRAPHY; HOLOGRAPHY; MATERIALS THEREFOR; ORIGINALS THEREFOR; PHOTOGRAPHY; PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES; PHYSICS; SEMICONDUCTOR DEVICES

To provide a manufacturing method of a semiconductor device capable of preferably forming a recess in a membrane.SOLUTION: In a manufacturing method of a semiconductor device according to an embodiment, a first film is formed on a substrate, a second film including at least carbon is formed on the first film, a hole penetrating the second film is formed, and a recess that communicates with the hole is formed on the first film by etching using the second film as a mask. In this method, the second film includes a first layer formed on the first film and a second layer formed on the first layer, and the oxygen concentration of the first layer is higher than the oxygen concentration of the second layer.SELECTED DRAWING: Figure 6 【課題】膜に凹部を好適に形成することが可能な半導体装置の製造方法を提供する。【解決手段】一実施形態に係る半導体装置の製造方法は、基板上に第１膜を形成し、第１膜上に、少なくとも炭素を含む第２膜を形成し、第２膜を貫通するホールを形成し、第２膜をマスクとして用いたエッチングにより、ホールに連通する凹部を第１膜に形成する、ことを含む。この方法では、第２膜は、第１膜上に形成された第１層と、第１層上に形成された第２層と、を含み、第１層の酸素濃度が第２層の酸素濃度よりも高い。【選択図】図６