METHOD FOR PRODUCING SILICON CARBIDE POWDER

• Main Authors: SUZUKI MASAHARU, MATSUSHITA SHUYA, NAKAI NAOTO, ICHINOTSUBO YUKITERU
• Format: Patent
• Language: English; Japanese
• Published: 24.09.2021
• Subjects: CHEMISTRY; COMPOUNDS THEREOF; INORGANIC CHEMISTRY; METALLURGY; NON-METALLIC ELEMENTS

To provide a method for producing silicon carbide with a high proportion of α-SiC and increased yield of SiC.SOLUTION: The present disclosure provides a method for producing silicon carbide powder that fires a mixture of amorphous silica and carbon in two stages, the method including a first firing step in which the mixture of amorphous silica and carbon is heated to a first predetermined temperature in a range of 300°C or higher and 1200°C or lower and is kept at the temperature and, following the first firing step, a second firing step in which the mixture is heated to a second predetermined temperature in a range of 1600°C or higher and 2500°C or lower and is kept at the temperature.SELECTED DRAWING: Figure 1 【課題】α−ＳｉＣの割合が多く、かつＳｉＣの収率を高くすることができる炭化ケイ素の製造方法を提供する。【解決手段】非晶質シリカとカーボンの混合物を二段階焼成する炭化ケイ素粉末の製造方法であって、前記非晶質シリカとカーボンの混合物を３００℃以上１２００℃以下の範囲の第一の所定の温度のまで昇温し保持する第一焼成工程と、前記第一焼成工程の後に、１６００℃以上２５００℃以下の範囲の第二の所定の温度まで昇温し保持する第二焼成工程と、を含む。【選択図】図１