ELECTROSTATIC CHUCK

• Main Author: SUGAYA ATSUSHI
• Format: Patent
• Language: English; Japanese
• Published: 16.09.2021
• Subjects: BASIC ELECTRIC ELEMENTS; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER; ELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; GENERATION; SEMICONDUCTOR DEVICES

To provide an electrostatic chuck for an insulating substrate, which is reduced in risk of discharge and capable of highly accurately sucking an insulating substrate with high sucking force.SOLUTION: An electrostatic chuck 100 for sucking an insulating substrate sucks an insulating substrate in which at least a sucked surface is formed of an insulator. The electrostatic chuck includes: a ceramic base 10; an insulating layer 20 formed on one main surface of the ceramic base 10, the insulating layer having a suck surface 22 sucking the insulating substrate; and a pair of electrodes 30a, 30b formed between the ceramic base 10 and the insulating layer 20. The insulating layer 20 is the same ceramic sintered body as the ceramic base 10. The thickness D of the insulating layer 20 is 0.001 or more and 0.1 mm or less, and the distance G between electrodes of the pair of electrodes 30a, 30b is 0.3 mm or more and 2.5 mm or less.SELECTED DRAWING: Figure 1 【課題】放電のリスクが低減され、絶縁性基板を高い吸着力で精度よく吸着できる絶縁性基板用の静電チャックを提供する。【解決手段】少なくとも被吸着面が絶縁体で形成された絶縁性基板を吸着する絶縁性基板吸着用静電チャック１００であって、セラミックス基台１０と、前記セラミックス基台１０の一方の主面に形成され、前記絶縁性基板を吸着する吸着面２２を有する絶縁層２０と、前記セラミックス基台１０と前記絶縁層２０との間に形成される一対の電極３０ａ、３０ｂと、を備え、前記絶縁層２０は、前記セラミックス基台１０と同一のセラミックス焼結体であり、前記絶縁層２０の厚みＤは、０．００１ｍｍ以上０．１ｍｍ以下であり、前記一対の電極３０ａ、３０ｂの電極間の距離Ｇは、０．３ｍｍ以上２．５ｍｍ以下である。【選択図】図１