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Summary:To provide a separating method with high mass-productivity and at low cost.SOLUTION: A manufacturing method for a semiconductor device includes a first step of preparing a process member, a second step of irradiating the process member with light, and a third step of separating a supporting substrate from the process member. In the first step, a resin layer is formed on the supporting substrate, an opening part is formed along an outer periphery of two sides of the resin layer facing each other in a top view, an element layer is formed on the resin layer inside the opening part in the top view, and the supporting substrate and a counter substrate are bonded together so that a first adhesive layer is in contact with the supporting substrate in the opening part. In the second step, the light is light from a laser light source and the entire surface of the process member is irradiated with the light from the supporting substrate side. In the third step, a blade is inserted from the resin layer or an interface between the supporting substrate and the resin layer at an end part of the process member and passes the opening part.SELECTED DRAWING: Figure 1 【課題】低コストで量産性の高い剥離方法を提供する。【解決手段】加工部材を準備する第1の工程と、加工部材に光を照射する第2の工程と、加工部材から支持基板を剥離する第3の工程を有し、第1の工程において、支持基板上に樹脂層を形成し、樹脂層の、上面視において対向する2辺の外周に沿って開口部を形成し、樹脂層上に、上面視において開口部より内側に素子層を形成し、開口部において第1の接着層が支持基板と接するように、支持基板と対向基板を貼り合わせ、第2の工程において、光は、レーザ光源からの光であり、光を、加工部材の全面に支持基板側から照射し、第3の工程において、加工部材の端部において支持基板及び樹脂層の界面又は樹脂層から刃を挿入し、開口部を通過させる。【選択図】図1
Bibliography:Application Number: JP20210081369