NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME

• Main Authors: NODA KOTARO, OIDE HIROYUKI
• Format: Patent
• Language: English; Japanese
• Published: 13.09.2021
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

To provide a nonvolatile semiconductor memory device capable of preventing a short-circuit between adjacent wiring and reducing wiring resistance.SOLUTION: A nonvolatile semiconductor memory device according to an embodiment comprises: a first wiring layer extending in a first direction; a second wiring layer extending in a second direction; a third wiring layer extending in the second direction and provided above in a third direction; a first memory cell arranged between the second wiring layer and the first wiring layer and including a first resistance change film; a fourth wiring layer extending in the first direction and provided above in the third direction; and a second memory cell arranged between the fourth wiring layer and the third wiring layer and including a second resistance change film. The second wiring layer includes a first surface S1 on an upper side in contact with the third wiring layer and a second surface S2 including a portion longer than the first surface in the first direction, provided separated from the first surface in the third direction, extending in the first direction, and connected to the portion longer than the first surface among the surfaces of the second wiring layer. The third wiring layer includes a third surface S3 in contact with the first surface of the second wiring layer, and the third surface is longer than the first surface in the first direction.SELECTED DRAWING: Figure 8B 【課題】隣接配線間の短絡を防止し、かつ配線抵抗を低減する。【解決手段】実施の形態に係る不揮発性半導体記憶装置は、第１方向に延伸する第１配線層と、第２方向に延伸する第２配線層と、第２方向に延伸し、第３方向上方に設けられる第３配線層と、第２配線層と第１配線層との間に配置され第１抵抗変化膜を有する第１メモリセルと、第１方向に延伸し、第３方向上方に設けられる第４配線層と、第４配線層と第３配線層との間に配置され第２抵抗変化膜を有する第２メモリセルを備える。第２配線層は、その表面のうち、第３配線層に接している上側の第１面Ｓ１及び、第１方向において第１面より長い部分を有し、第１面に対して第３方向に離れて設けられかつ、第１方向に延伸して、長い部分に接続する第２面Ｓ２を有する。第３配線層は、第３配線層の表面のうち、第２配線層の第１面に接する第３面Ｓ３を有し、第３面は第１方向において第１面より長い。【選択図】図８Ｂ