3D-NAND MEMORY CELL STRUCTURE

To provide a method for forming a 3D-NAND memory cell.SOLUTION: In a method of providing an unsubstituted metal gate (RMG) process in which the height of a metal stack 120 is reduced, and the oxidation of a metal layer 134 exposed to the surrounding oxygen is suppressed in a memory device 100, after...

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Bibliographic Details
Main Authors KANG SUNG-KWAN, KANG CHANG SEOK, KITAJIMA TOMOHIKO
Format Patent
LanguageEnglish
Japanese
Published 09.09.2021
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:To provide a method for forming a 3D-NAND memory cell.SOLUTION: In a method of providing an unsubstituted metal gate (RMG) process in which the height of a metal stack 120 is reduced, and the oxidation of a metal layer 134 exposed to the surrounding oxygen is suppressed in a memory device 100, after an opening is formed, a nitriding process is performed to nitride the surface of the exposed metal layer inside the opening. A metal nitriding region 155 formed on the surface of the metal layer inside the opening functions as a barrier layer for oxygen diffusion. Further, the metal nitriding region functions as an electrode of a charge trap memory cell.SELECTED DRAWING: Figure 15 【課題】３Ｄ−ＮＡＮＤメモリセルを形成するための方法を提供する。【解決手段】モリデバイス１００において、周囲の酸素に曝された金属層１３４の酸化を抑制する、金属スタック１２０の高さがより薄くなる非置換金属ゲート（ＲＭＧ）プロセスを提供する方法であって、開口部が形成された後、開口部の内側の露出した金属層の表面を窒化するための窒化プロセスを実行する。開口部の内側の金属層の表面に形成された金属窒化領域１５５は、酸素拡散のバリア層として機能する。さらに、金属窒化領域は、電荷トラップメモリセルの電極として機能する。【選択図】図１５
Bibliography:Application Number: JP20210006817