SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

• Main Authors: SHIMIZU KOJI, HORII SHINJI, MURASE SEIICHIRO
• Format: Patent
• Language: English; Japanese
• Published: 02.09.2021
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

To provide a complementary semiconductor device with a wide noise margin.SOLUTION: A semiconductor device comprises a first semiconductor device 500, which is an n-type semiconductor device, and a second semiconductor device 501, which is a p-type semiconductor device, both of semiconductor layers 560 and 561 of each semiconductor device contain carbon nanotubes, and the total length (Cn) of the carbon nanotubes present per 1 μm2 of the semiconductor layer of the first semiconductor device and the total length (Cp) of the carbon nanotubes present per 1 μm2 of the semiconductor layer of the second semiconductor device are in a predetermined relationship.SELECTED DRAWING: Figure 5 【課題】ノイズマージンが広い相補型半導体装置を提供する。【解決手段】半導体装置において、ｎ型半導体素子である第１の半導体素子５００とｐ型半導体素子である第２の半導体素子５０１とを有し、各半導体素子の半導体層５６０、５６１がともにカーボンナノチューブを含有し、第１の半導体素子の半導体層１μｍ２当たりに存在するカーボンナノチューブの総長さ（Ｃｎ）と、第２の半導体素子の半導体層１μｍ２当たりに存在するカーボンナノチューブの総長さ（Ｃｐ）との間に所定の関係を有する。【選択図】図５