SOT (SPIN ORBIT TORQUE) MTJ (MAGNETIC TUNNEL JUNCTION) DEVICE, MAMR (MICROWAVE-ASSISTED MAGNETIC RECORDING) WRITE HEAD, MRAM (MAGNETORESISTIVE RANDOM ACCESS MEMORY) DEVICE

To provide a device comprising a BiSb layer having a high spin hole angle and a high conductivity.SOLUTION: A spin orbit torque (SOT) magnetic tunnel junction (MTJ) device includes a substrate, a buffer layer 10 formed on the substrate, and a bismuth antimony (BiSb) layer 20 formed on the buffer lay...

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Main Authors LE QUANG, HWANG CHERNGYE, NGUYEN THAO A, BRIAN R YORK, GAO ZHENG, HO KUOK SAN, PHAM NAM HAI
Format Patent
LanguageEnglish
Japanese
Published 02.09.2021
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
INDUCTANCES
INFORMATION STORAGE
INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORDCARRIER AND TRANSDUCER
MAGNETS
PHYSICS
SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
SEMICONDUCTOR DEVICES
TRANSFORMERS
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Summary:To provide a device comprising a BiSb layer having a high spin hole angle and a high conductivity.SOLUTION: A spin orbit torque (SOT) magnetic tunnel junction (MTJ) device includes a substrate, a buffer layer 10 formed on the substrate, and a bismuth antimony (BiSb) layer 20 formed on the buffer layer 10. The BiSb layer 20 is (012) oriented.SELECTED DRAWING: Figure 1 【課題】高いスピンホール角と高い導電率を備えたＢｉＳｂ層を有するデバイスを提供する。【解決手段】スピン軌道トルク（ＳＯＴ）磁気トンネル接合（ＭＴＪ）デバイスは、基板、基板上に形成されたバッファ層１０、およびバッファ層１０上に形成されたビスマスアンチモン（ＢｉＳｂ）層２０を含み、ＢｉＳｂ層２０は（０１２）配向を有する。【選択図】図１
Bibliography:Application Number: JP20200212229