IMAGING APPARATUS

• Main Authors: NAKADA MANABU, IDO MASUMI, MACHIDA SHINICHI, INOUE YASUNORI
• Format: Patent
• Language: English; Japanese
• Published: 19.08.2021
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

To provide an imaging apparatus capable of switching a wavelength band of an image which can be acquired, or switching a spectral response characteristic.SOLUTION: An imaging apparatus comprises: at least one unit pixel cell containing a photoelectric conversion part 10; and a voltage application circuit. The photoelectric conversion part 10 includes: a pixel electrode 50; a light transmissivity counter electrode 52; and a photoelectric conversion layer 51 containing a first photoelectric conversion layer 511 including a first material and a second photoelectric conversion layer 512 including a second material. An impedance of the first photoelectric conversion layer is larger than the impedance of the second photoelectric conversion layer. The voltage application circuit selectively applies any one of a first voltage and a second voltage having an absolute value larger than that of the first voltage to between a pixel electrode and the counter electrode.SELECTED DRAWING: Figure 3 【課題】取得できる画像の波長帯域を切り替えたり、分光感度特性を切り替えたりすることが可能な撮像装置を提供する。【解決手段】撮像装置は、光電変換部１０を含む少なくとも１つの単位画素セルと、電圧印加回路とを備える。光電変換部１０は、画素電極５０と、透光性の対向電極５２と、第１材料を含む第１光電変換層５１１及び第２材料を含む第２光電変換層５１２を含む光電変換構造５１と、を有する。第１光電変換層のインピーダンスは、第２光電変換層のインピーダンスよりも大きい。電圧印加回路は、第１電圧および第１電圧よりも絶対値が大きい第２電圧のいずれかを画素電極と対向電極との間に選択的に印加する。【選択図】図３