DEFECT EVALUATION METHOD FOR SILICON CARBIDE SUBSTRATE AND MANUFACTURING METHOD FOR SILICON CARBIDE SUBSTRATE

To provide a defect evaluation method for silicon carbide substrate and manufacturing method for silicon carbide substrate, capable of identifying a defect with high precision.SOLUTION: Photoluminescence light generates from a silicon carbide substrate by irradiating the silicon carbide substrate wi...

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Main Authors OKUMURA SOICHIRO, SAKURADA TAKASHI, NISHIGUCHI TARO, HISANABE HIDEYUKI, HAYASHI KEI, OKAYAMA NAOKI
Format Patent
LanguageEnglish
Japanese
Published 10.08.2021
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES
MEASURING
PHYSICS
SEMICONDUCTOR DEVICES
TESTING
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Summary:To provide a defect evaluation method for silicon carbide substrate and manufacturing method for silicon carbide substrate, capable of identifying a defect with high precision.SOLUTION: Photoluminescence light generates from a silicon carbide substrate by irradiating the silicon carbide substrate with exciting light. Photoluminescence light is detected by a color image sensor. The photoluminescence light is obtained from the color image sensor and defects in the silicon carbide substrate are classified by utilizing color images expressed in a color space of either one of a RGB color space and a HSV color space.SELECTED DRAWING: Figure 4 【課題】欠陥を精度良く識別可能な炭化珪素基板の欠陥評価方法および炭化珪素基板の製造方法を提供する。【解決手段】炭化珪素基板に対して励起光を照射することにより炭化珪素基板からフォトルミネッセンス光が発生する。フォトルミネッセンス光がカラーイメージセンサによって検出される。カラーイメージセンサから得られ、かつＲＧＢ色空間およびＨＳＶ色空間の少なくともいずれかの色空間で表されたカラー画像を利用して、炭化珪素基板における欠陥が分類される。【選択図】図４
Bibliography:Application Number: JP20200168459