SEMICONDUCTOR DEVICE

• Main Author: NAGAI SHOHEI
• Format: Patent
• Language: English; Japanese
• Published: 02.08.2021
• Subjects: BASIC ELECTRIC ELEMENTS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS; PRINTED CIRCUITS; SEMICONDUCTOR DEVICES

To suppress a temperature rise in a semiconductor element by widely diffusing a heat generated in the semiconductor element to a substrate body.SOLUTION: A semiconductor device comprises: a substrate body made of an insulation material; an insulation circuit board arranged inside the substrate body and including a ceramic substrate; a semiconductor element arranged on the insulation circuit board inside the substrate body; a circuit layer located above or below the insulation circuit board in the substrate body and extending in parallel to the insulation circuit board; and a plurality of vias extending from the circuit layer toward the insulation circuit board. The insulation circuit board is provided on one side of the ceramic substrate, and further includes a first conductor pattern in which the semiconductor element is arranged, and a second conductor pattern provided on one side of the ceramic substrate and electrically insulated from the first conductor pattern. The plurality of vias include a first via connecting between the circuit layer and the semiconductor element, and a second via connecting between the circuit layer and the second conductor pattern.SELECTED DRAWING: Figure 1 【課題】半導体素子で生じた熱を基板本体に広く拡散させ、半導体素子の温度上昇を抑制する。【解決手段】半導体装置は、絶縁材料で構成された基板本体と、基板本体の内部に配置されており、セラミック基板を有する絶縁回路基板と、基板本体の内部で絶縁回路基板上に配置された半導体素子と、基板本体において絶縁回路基板の上方又は下方に位置しており、絶縁回路基板に対して平行に延びる回路層と、回路層から絶縁回路基板に向けて延びる複数のビアとを備える。絶縁回路基板は、セラミック基板の一方側に設けられており、半導体素子が配置されている第１導体パターンと、セラミック基板の一方側に設けられているとともに、第１導体パターンから電気的に絶縁された第２導体パターンとをさらに有する。複数のビアは、回路層と半導体素子との間を接続する第１のビアと、回路層と第２導体パターンとの間を接続する第２のビアとを有する。【選択図】図１