SEMICONDUCTOR DEVICE

• Main Authors: YAMAZAKI SHUNPEI, KUWABARA HIDEAKI, SASAKI TOSHINARI, NODA KOSEI, OHARA HIROKI
• Format: Patent
• Language: English; Japanese
• Published: 26.07.2021
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

To provide a semiconductor device having a structure that is able to sufficiently reduce parasitic capacitance between wires.SOLUTION: In a thin film transistor of a bottom gate structure, an oxide insulating layer serving as a channel protective layer is formed on a part of an oxide semiconductor l...