SEMICONDUCTOR DEVICE

• Main Authors: AKIMOTO KENGO, SASAKI TOSHINARI
• Format: Patent
• Language: English; Japanese
• Published: 01.07.2021
• Subjects: BASIC ELECTRIC ELEMENTS; DEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH ISMODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THEDEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY,COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g.SWITCHING, GATING, MODULATING OR DEMODULATING; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; FREQUENCY-CHANGING; NON-LINEAR OPTICS; OPTICAL ANALOGUE/DIGITAL CONVERTERS; OPTICAL LOGIC ELEMENTS; OPTICS; PHYSICS; SEMICONDUCTOR DEVICES; TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF

To provide a thin film transistor including an oxide semiconductor whose field effect mobility is improved and whose off current increase can be suppressed even after improving the field effect mobility.SOLUTION: The thin film transistor including an oxide semiconductor film includes a semiconductor layer with smaller thickness and higher conductivity than the oxide semiconductor layer between the oxide semiconductor layer and a gate insulating layer. This can improve the field effect mobility of the thin film transistor and suppress the increase in off current.SELECTED DRAWING: Figure 1 【課題】酸化物半導体を用いた薄膜トランジスタにおいて、電界効果移動度を向上させることを課題の一とする。また、薄膜トランジスタの電界効果移動度を向上させても、オフ電流の増大を抑制することを課題の一とする。【解決手段】酸化物半導体層を用いた薄膜トランジスタにおいて、酸化物半導体層とゲート絶縁層の間に、該酸化物半導体層より導電率が高く、膜厚が薄い半導体層を形成することによって、該薄膜トランジスタの電界効果移動度を向上させ、且つオフ電流の増大を抑制することができる。【選択図】図１