SEMICONDUCTOR DEVICE
To provide a thin film transistor including an oxide semiconductor whose field effect mobility is improved and whose off current increase can be suppressed even after improving the field effect mobility.SOLUTION: The thin film transistor including an oxide semiconductor film includes a semiconductor...
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Main Authors | , |
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Format | Patent |
Language | English Japanese |
Published |
01.07.2021
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Subjects | |
Online Access | Get full text |
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Summary: | To provide a thin film transistor including an oxide semiconductor whose field effect mobility is improved and whose off current increase can be suppressed even after improving the field effect mobility.SOLUTION: The thin film transistor including an oxide semiconductor film includes a semiconductor layer with smaller thickness and higher conductivity than the oxide semiconductor layer between the oxide semiconductor layer and a gate insulating layer. This can improve the field effect mobility of the thin film transistor and suppress the increase in off current.SELECTED DRAWING: Figure 1
【課題】酸化物半導体を用いた薄膜トランジスタにおいて、電界効果移動度を向上させることを課題の一とする。また、薄膜トランジスタの電界効果移動度を向上させても、オフ電流の増大を抑制することを課題の一とする。【解決手段】酸化物半導体層を用いた薄膜トランジスタにおいて、酸化物半導体層とゲート絶縁層の間に、該酸化物半導体層より導電率が高く、膜厚が薄い半導体層を形成することによって、該薄膜トランジスタの電界効果移動度を向上させ、且つオフ電流の増大を抑制することができる。【選択図】図1 |
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Bibliography: | Application Number: JP20210044840 |