SEMICONDUCTOR PHOTODETECTOR

To provide a semiconductor photodetector whose spectral characteristics are less likely to be controlled.SOLUTION: A semiconductor photodetector 1 includes a semiconductor substrate 11 which is a silicon substrate. The semiconductor substrate 11 has a main surface 11a and a main surface 11b facing e...

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Main Authors KODA MORIHIRO, SONOBE HIRONORI, NAGANO TERUMASA, SUZUKI YOSHIYUKI, YAMAMOTO AKINAGA, KONDO TAKAHIRO, TSUCHIYA RYUTARO
Format Patent
LanguageEnglish
Japanese
Published 01.07.2021
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:To provide a semiconductor photodetector whose spectral characteristics are less likely to be controlled.SOLUTION: A semiconductor photodetector 1 includes a semiconductor substrate 11 which is a silicon substrate. The semiconductor substrate 11 has a main surface 11a and a main surface 11b facing each other. The semiconductor substrate 11 has a pn junction composed of a semiconductor region 13 and a semiconductor region 15. The main surface 11b includes a region 11b1 and a region 11b2. The region 11b1 faces the semiconductor region 15. A plurality of depressions 21 are provided in the region 11b1. The plurality of depressions 21 are formed in the region 11b1 so as to be regularly arranged.SELECTED DRAWING: Figure 1 【課題】分光特性の制御性が低下しがたい半導体光検出素子を提供する。【解決手段】半導体光検出素子１は、シリコン基板である半導体基板１１を備えている。半導体基板１１は、互いに対向する主面１１ａ及び主面１１ｂを有している。半導体基板１１は、半導体領域１３と半導体領域１５とで構成されたｐｎ接合を有している。主面１１ｂは、領域１１ｂ１と、領域１１ｂ２とを含んでいる。領域１１ｂ１は、半導体領域１５と対向している。領域１１ｂ１には、複数の窪み２１が設けられている。複数の窪み２１は、規則的に配置されるように、領域１１ｂ１に形成されている。【選択図】図１
Bibliography:Application Number: JP20190231346