RESIST COMPOSITION, RESIST PATTERN FORMING METHOD, AND ACID DIFFUSION CONTROL AGENT
To provide a resist composition which achieves higher sensitivity and is excellent in lithographic characteristics such as roughness, and a resist pattern forming method using the resist composition.SOLUTION: The resist composition, which generates an acid upon exposure and whose solubility in a dev...
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Main Authors | , , , |
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Format | Patent |
Language | English Japanese |
Published |
01.07.2021
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Subjects | |
Online Access | Get full text |
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Summary: | To provide a resist composition which achieves higher sensitivity and is excellent in lithographic characteristics such as roughness, and a resist pattern forming method using the resist composition.SOLUTION: The resist composition, which generates an acid upon exposure and whose solubility in a developer changes by the action of an acid, contains: a base component (A) whose solubility in a developer changes by the action of an acid; and a compound (D0) represented by the following general formula (d0). Rd01 represents a monovalent organic group; Rd02 represents a single bond or a divalent linking group; m represents an integer of 1 or more; and Mm+ represents an m-valent organic cation.SELECTED DRAWING: None
【課題】高感度化が図れ、かつ、ラフネス等のリソグラフィー特性に優れるレジスト組成物及び当該レジスト組成物を用いたレジストパターン形成方法の提供。【解決手段】露光により酸を発生し、かつ、酸の作用により現像液に対する溶解性が変化するレジスト組成物であって、酸の作用により現像液に対する溶解性が変化する基材成分(A)と、下記一般式(d0)で表される化合物(D0)と、を含有する、レジスト組成物。Rd01は、1価の有機基を表す。Rd02は、単結合又は2価の連結基を表す。mは1以上の整数を表し、Mm+はm価の有機カチオンを表す。[化1]【選択図】なし |
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Bibliography: | Application Number: JP20190229770 |